dm n2011 uf de advance information advanced information 20v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = + 25c 20v 9.5 m ? m? @ v gs = 2.5v 10.8 a description this new generation mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? general purpose interfacing switch ? power management functions features ? 0. 6 mm p rofile ? i deal for l ow p rofile a pplications ? pcb f ootprint of 4mm 2 ? low gate threshold voltage ? low on - resistance ? esd protected gate ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. ?green? device (note 3 ) ? qualified to aec - q101 standards for high reliability mechanical data ? case: u - dfn 2020- 6 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish ? nipdau over copper l eadframe . solderable per mil - std - 202, method 208 ? weight: 0.0065 grams ( a pproximate ) ordering information (note 4 ) part number marking reel size (inches) quantity per reel dm n2011 ufde - 7 n 3 7 3,000 dm n2011 ufde - 13 n 3 13 10 ,000 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporated?s definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com /products/packages.html . mark ing information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d n3 = product type marking code ym = date code marking y = year (ex: a = 201 3 ) m = month (ex: 9 = september) pin1 n 3 y m esd protected bottom view u - dfn 2020 - 6 bottom view pin out equivalent circuit d s g g ate protection diode e4 dm n2011 ufde d atasheet number: ds 36376 rev. 4 - 2 1 of 7 www.diodes.com september 2014 ? diodes incorporated
dm n2011 uf de advance information advanced information maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value units drain - source voltage v dss 20 v gate - source voltage v gss 12 v continuous drain current (note 6 ) v gs = 4.5 v steady state t a = +25c t a = +70c i d 1 1.7 9.3 a t<10s t a = +25c t a = +70c i d 1 4.2 1 1.4 a continuous drain current (note 6 ) v gs = 2.5 v steady state t a = +25c t a = +70c i d 1 0.8 8.7 a t<10s t a = +25c t a = +70c i d 13. 2 1 0.6 a pulsed drain curren t ( 10 s pulse, duty cycle = 1% ) i dm 80 a maximum body diode continuous current i s 2.5 a avalanche current (note 7 ) l = 0. 1mh i a s 18 a avalanche energy (note 7 ) l = 0. 1mh e a s 17 mj thermal characteristics characteristic symbol value units total power dissipation (note 5) t a = +25c p d 0.61 w t a = + 70 c 0. 39 thermal resistance, junction to ambient (note 5) s teady state r ja 209 c/w t<10s 1 4 2 total power dissipation (note 6 ) t a = +25c p d 1.97 w t a = + 70 c 1. 27 thermal resistance, junction to ambient (note 6 ) s teady state r ja 6 4 c/w t<10s 43 thermal resistance, junction to case (note 6 ) r www.diodes.com september 2014 ? diodes incorporated
dm n2011 uf de advance information advanced information electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics ( note 8 ) drain - source breakdown voltage bv dss 20 ? ? v v gs = 0v, i d = 250 a on characteristics (note 8 ) gate threshold voltage v gs(th) 0. 4 ? 1. 0 v v ds = v gs , i d = 250 a ? v gs = 4. 5 v, i d = 7 a 7.5 1 1 v gs = 2.5v, i d = 7 a 10 20 v gs = 1 . 8 v, i d = 5 a 15 35 v gs = 1 .5v, i d = 3 a diode forward voltage v sd ? 0.7 1.2 v v gs = 0v, i s = 8.5 a on state drain current (note 9) i d(on) 20 ? ? a v ds Q 5v, v gs = 4.5v dynamic characteristic s (note 9 ) input capacitance c iss ? 2248 3372 pf v ds = 10 v, v gs = 0v , f = 1.0mhz output capacitance c oss ? 295 443 pf reverse transfer capacitance c rss ? 265 398 pf gate resistance r g ? 1.5 3 ? v ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = 4.5 v ) q g ? 24 36 nc v ds = 10 v, i d = 8.5 a total gate charge ( v gs = 1 0v ) q g ? 56 84 nc gate - source charge q gs ? 3.5 6 nc gate - drain charge q gd ? 5.1 8 nc turn - on delay time t d(on) ? 3.6 6 ns v ds = 1 0 v, i d = 8.5 a v g s = 4.5 v, r g = 1.8 ? turn - on rise time t r ? 2.6 4 ns turn - off delay time t d(off) ? 21.6 33 ns turn - off fall time t f ? 1 3.5 21 ns reverse recovery time t rr ? 12.8 20 ns i f = 8.5 a, di/dt = 21 0a/s reverse recovery charge q rr ? 6.9 11 n c notes: 5. device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 6. device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 7. i as and e as rating are based on low frequency and duty cycles to keep t j = + 25c 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing. 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v , drain-source voltage (v) figure 1 typical output characteristic ds i , d r a i n c u r r en t (a) d v = 1.0v gs v = 1.2v gs v = 1.5v gs v = 4.5v gs v = 10v gs v = 3.5v gs v = 4.0v gs v = 2.5v gs v = 3.0v gs v = 2.0v gs 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r en t (a) d v = 5.0v ds t = 150c a t = 85c a t = 25c a t = -55c a t = 125c a dm n2011 ufde d atasheet number: ds 36376 rev. 4 - 2 3 of 7 www.diodes.com september 2014 ? diodes incorporated
dm n2011 uf de advance information advanced information i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? ? ? r , d r ai n -so u r c e o n -r es i st an c e (n o r m al i z ed ) d s ( o n ) v= v i = 3a gs d 1.8 v= v i = 5a gs d 2.5 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) figure 7 on-resistance variation with temperature j r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? www.diodes.com september 2014 ? diodes incorporated
dm n2011 uf de advance information advanced information 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = -55c a t = 85c a t = 25c a t = 150c a t = 125c a v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 100 1000 10000 0 2 4 6 8 10 12 14 16 18 20 f = 1mhz c iss c oss c rss q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 1 2 3 4 5 6 7 8 9 10 0 10 20 30 40 50 60 v = 10v i= a ds d 8.5 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 -v , drain-source voltage (v) figure 12 soa, safe operation area ds - i , d r a i n c u r r e n t ( a ) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c t = 25c j(max) a v = 4.5v single pulse gs dut on 1 * mrp board 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r r = 207c/w duty cycle, d = t1/ t2 ? ja ja ja dm n2011 ufde d atasheet number: ds 36376 rev. 4 - 2 5 of 7 www.diodes.com september 2014 ? diodes incorporated
dm n2011 uf de advance information advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. u - dfn2020 - 6 type e dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.03 a3 ? ? 0.15 b 0.25 0.35 0.30 b1 0.185 0.285 0.235 d 1.95 2.05 2.00 d2 0.85 1.05 0.95 e 1.95 2.05 2.00 e2 1.40 1.60 1.50 e ? ? 0.65 l 0.25 0.35 0.30 l1 0.82 0.92 0.87 k1 ? ? 0.305 k2 ? ? 0.225 z ? ? 0.20 all dimensions in mm dimensions value (in mm) c 0.650 x 0.400 x1 0.285 x2 1.050 y 0.500 y1 0.920 y2 1.600 y3 2.300 a1 z(4x) b1 l1 k1 k2 d d2 e e b(6x) l(2x) e2 a a3 x1 y3 x (6x) c x2 y1 y2 y (2x) dm n2011 ufde d atasheet number: ds 36376 rev. 4 - 2 6 of 7 www.diodes.com september 2014 ? diodes incorporated
dm n2011 uf de advance information advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the law s of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorpora ted does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or u ser of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all d amages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized app lication, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such un intended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diode s incorporated products are specifically not authorized for use as critical components in life support devices or systems wit hout the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect it s safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 4 , diodes incorporated www.diodes.com dm n2011 ufde d atasheet number: ds 36376 rev. 4 - 2 7 of 7 www.diodes.com september 2014 ? diodes incorporated
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